姓名：袁顺发 YOON Soon Fatt 职称：新加坡工程院院士、长江学者特聘教授 导师类型：硕导、博导 团队名称：海洋光学的带隙工程和光电子系统团队 所属学域：海洋科技学域 邮箱：soon.yoon@bitzh.edu.cn

研究领域

主要研究领域为：

1. 海洋光学中光电子和量子电子器件中热传播的三维模拟
2. 光电子和量子电子器件中的物理
3. 海洋环境中光电子和量子电子器件的光电特性
4. 半导体缺陷表征

教育经历

1980.07-1983.07 英国威尔士大学 电气工程专业 学士

1983.07-1986.07 英国威尔士大学 电气工程和物理电子学专业 博士

工作经历

1983.10-1986.08 英国哈洛标准电信实验室研究员（半导体激光器研发）

1986.09-1988.07 意大利阿格拉特市SGS-汤姆逊微电子中心研发实验室研究工程师 （兼任）

1989.10-1991.12 南洋理工学院讲师

1992.01-1997.12 南洋理工大学高级讲师

1998.01-2002.05 南洋理工大学副教授

2002.06-2018.10 南洋理工大学教授

2013.07-2018.07新加坡南洋理工大学电气与电子工程学院院长

2018.10-2026.03 新加坡国立大学教授

2018.10-2021.12新加坡国立大学设计与工程学院副院长（工业）

2019.01-2021.12新加坡国立大学副校长办公室（研究与技术）执行主任（业界参与和伙伴关系）

2020.07-2023.06新加坡国立大学淡马锡国防系统研究所执行董事

2024.03-2025.03 中国深圳博升光电科技有限公司杰出访问科学家（垂直腔面发射激光器物理特性与设计研发）

2026.04-至今 北京理工大学（珠海）教授

学术成果

（一）学术论文

1. Zhang, J., Shao, R., Xu, H. et al. Flexible InGaAs/InAlAs avalanche photodiodes for short-wave infrared detection. Nat Commun 16, 9367 (2025).

2. W. K. Loke, K. H. Tan, S. Wicaksono and S. F. Yoon, “Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate”

Semiconductor Science and Technology

Vol. 39, 2024, No. 065008.

3. Y.H.Jin, B.F.Zhu, K.H.Tan, S.Wicaksono, C.Sirtori, S.F.Yoon, and Q.J.Wang, “Supersymmetric quantum cascade laser array”

Applied Physics Letters,

Vol. 124(11), 2024, No. 111109.

4. W.K.Loke, K.H.Tan, S.Wicaksono, and S.F.Yoon, “Semi-empirical growth model of InSbBi grown by molecular beam epitaxy”

Materials Science and Engineering: B

Vol. 300, 2024, No. 117067.

5. K.H. Tan, W.K. Loke, S. Wicaksono, and S.F.Yoon, “Growth of droplet-free InSbBi on GaAs substrate”

AIP Advances

Vol. 13, 2023, No. 125221.

6. W.K. Loke. Y, Wang, H. Xie, H. T. Tan, S. Bao, K. H. Lee, L. Khaw, K. Lee, C.S. Tan, G. I. Ng, E.A. Fitzgerald, and S.F.Yoon, “Layer-transferred gallium arsenide heterojunction bipolar transistor on insulator substrate”

Materials Science and Engineering: B,

Vol. 296, 2023, No. 116665.

7. J. Zhang, H. Xu, G. Zhang, Y. Chen, H. Wang, K.H. Tan, S. Wicaksono, C. Sun, Q. Kong, C. Wang, C. Ci Wen Lim, S.F. Yoon, X. Gong, “Hybrid and heterogeneous photonic integrated near-infrared InGaAs/InAlAs single-photon avalanche diode”

Quantum Science and Technology

Vol. 8(2), 2023, No. 025009.

8. F. Sun, J. Li, K.H. Tan, S. Wicaksono, Y.D. Chua, C. Wang, M. Dai, V.Q.G. Roth, S.F. Yoon, Q.J. Wang, “Beam combining of a broadly and continuously tunable quantum cascade laser”

Optics Express

Vol. 30(20), 2022, pp. 35999-36009.

9. J. Li, F. Sun, Y. Jin, Y.D. Chua, K.H. Tan, S. Wicaksono, C. Sirtori, S.F. Yoon, Q.J. Wang, “Widely tunable single-mode slot waveguide quantum cascade laser array”

Optics Express

Vol. 30(1), 2022, pp. 629-640.

10. J. Zhang, H. Wang, G. Zhang, K.H. Tan, S. Wicaksono, H. Xu, C. Wang, Y. Chen, Y. Liang, C.C. Wen Lim, S.F. Yoon, X. Gong, “High-performance InGaAs/InAlAs single-photon avalanche diode with a triple-mesa structure for near-infrared photon detection”

Optics Letters

Vol. 46(11), 2021, pp. 2670-2673.

11. Y. Wang, W.K. Loke, Y. Gao, K.H. Lee, K.E. Kian Lee, C.L. Gan, C.S. Tan, E.A. Fitzgerald, S.F. Yoon, “CMOS-Compatible Ti/TiN/Al Refractory Ohmic Contact for GaAs Heterojunction Bipolar Transistors Grown on Ge/Si Substrate”

IEEE Transactions on Electron Devices

Vol 68(12), 2021, pp. 6065-6068.

12. K.H. Tan, W.K. Loke, S. Wicaksono, S.F. Yoon, “Growth of InAs0.32Sb0.68 on GaAs using a thin GaInSb buffer and strain superlattice layers”

AIP Advances

Vol 11(4), 2021, No. 045203.

13. Y. Jin, J. Li, Y.D. Chua, K.H. Tan, S. Wicaksono, C. Sirtori, S.F. Yoon, Q.J. Wang, “Long wavelength (λ > 13 μm) quantum cascade laser based on diagonal transition and three-phonon-resonance design”

Applied Physics Letters,

Vol. 119(13), 2021, No. 131105.

（二）书刊

1. H.T.Pham, S.F.Yoon and K.P.Lim, “Fabrication and Characterization of Dilute Nitride Indium Antimonide for Long Wavelength Infrared Applications”, Nova Science Publishers, Inc., 400 Oser Avenue, Suite 1600, Hauppauge, NY 11788, USA. 2012, ISBN 978-1-62100-940-5 (Chemistry Research and Applications).

2. Z.G.Xu, K.Youcef-Toumi and S.F.Yoon, “Applications and Nanomanufacturing of Modern Microfluidic Devices”, Chapter 4 in "Advances in Nanotechnology”, Vol.3, Editors: Zacharie Bartul and Jérôme Trenor, Nova Science Publishers, Inc., 400 Oser Avenue, Suite 1600 Hauppauge, NY 11788, USA. ISBN: 978-1-61668-161-6, 2010. pp.163-198.

3. C.Y.Ngo, S.F.Yoon and S.J.Chua “Quantum dot technology for broadband light sources”, in “Quantum Dots: Research, Technology and Applications”, Ed. Randolf W. Knoss, Nova Science Publishers, New York, December 2008, pp.203-244.

4. S.F.Yoon, S.Wicaksono, W.K.Loke, C.Y.Liu, K.H.Tan, W.J.Fan and Z.Z.Sun “Growth and characterization of dilute nitride materials for lasers and photodiodes” in "Nitrides and Dilute Nitrides: Growth, Physics and Devices”, 2007: 179-227, ISBN: 978-81-7895-250-5 Editor: Javier Miguel-Sánchez, Transworld Research Network.

5. S.F.Yoon, Z.Z.Sun and K.C.Yew, “Recent Progress in Dilute Nitride Quantum Dots”, Chapter 5, pp.157-178, DILUTE NITRIDE SEMICONDUCTORS, Ed. M.Henini, Elsevier Press, 2005, United Kingdom

6. S.F.Yoon, Q.F.Huang and Rusli “Electrical properties of metal-containing a-C:H”, Chapter 6.6, pp.229-232, Properties of Amorphous Carbon, R.Silva (Ed.), IEE INSPEC: Electronic Materials Information Service (EMIS) Series, 2003, London

7. Rusli, S.F.Yoon and Q.F.Huang, “Hydrogenated a-C optical coatings”, Chapter 10.10, pp.344-348, Properties of Amorphous Carbon, R.Silva (Ed.), IEE INSPEC: Electronic Materials Information Service (EMIS) Series, 2003, London

（三）专利

1. S.F.Yoon, D.W.Xu and C.Y.Yeo, “Apparatus and method for separating a stacked arrangement”, Technology Disclosure (TD) submitted to NTU, Nanyang Innovation and Enterprise Office (NIEO) on 13 January 2012. US patent application no. 14/390,239 (PCT/SG2013/000150). Korea patent application no. 10-2014-7031802 (PCT/SG2013/000150). China patent application no. 201380019900.4 (PCT/SG2013/000150). European patent application no. 13 782 595.6 (PCT/SG2013/000150). Singapore patent (granted 14 Oct 2015), PCT/SG2013/000150. US Patent No: US 9,522,521 B2 Date of Patent: Dec 20, 2016.

2. S.F.Yoon, K.H.Tan, W.K.Loke, S.Wicaksono, T.K.Ng, “Method for fabricating GaNAsSb semiconductor”, US patent no. US 8,202,788 B2 granted on 19 June 2012.

教学工作

荣誉奖励

1. Award from SEMI （Semiconductor Equipment Manufacturers Industry) for “Significant contribution to SEMI in Singapore Semiconductor Industry”
2. Distinguished Service Award from Institute of Microelectronics (IME) for “Dedicated service and invaluable contributions to Institute of Microelectronics” as Board Member.
3. Commendation Award for service as Board Member of the Temasek Laboratory. Commendation Award presented by Minister Teo Chee Hean (Singapore Minister for Defence).
4. Appreciation Award from A*STAR Science and Engineering Research Council (SERC) for distinguished service as the Chairman of the Science & Technology 2010 Technology-Scan Committee on Semiconductor and Photonics Technology.
5. Commendation Award from Minister Lim Hng Kiang (Singapore Minister for Trade and Industry) for distinguished service to the A*STAR Science & Technology 2010 Plan.

社会兼职

国际期刊审稿人

(i) Journal of Applied Physics (American Institute of Physics)

(ii) Applied Physics Letters (American Institute of Physics)

(iii) Diamond & Related Materials (Elsevier)

(iv) Microelectronics Journal (Elsevier)

(v) Thin Solid Films (Elsevier)

(vi) Photonics Technology Letters (IEEE)

(vii) Nanoscale Research Letters (Springer)

(viii) European Journal of Applied Physics (EDP Sciences)

(ix) IEEE Photonics Technology Letters

(x) IEEE Electron Device Letters